MRF7S15100HR3 MRF7S15100HSR3
3
RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics (TA
= 25
°C unless otherwise noted)
(continued)
Characteristic
Symbol
Min
Typ
Max
Unit
Typical Performances
(In Freescale Test Fixture, 50 ohm system) V
DD
= 28 Vdc, I
DQ
= 600 mA, 1470-1510 MHz Bandwidth
Pout
@ 1 dB Compression Point, CW
P1dB
100
W
IMD Symmetry @ 90 W PEP, Pout
where IMD Third Order
30 dBc
Intermodulation
(Delta IMD Third Order Intermodulation between Upper and Lower
Sidebands > 2 dB)
IMDsym
40
MHz
VBW Resonance Point
(IMD Third Order Intermodulation Inflection Point)
VBWres
70
MHz
Gain Flatness in 40 MHz Bandwidth @ Pout
= 23 W Avg.
GF
0.2
dB
Average Deviation from Linear Phase in 40 MHz Bandwidth
@ Pout
= 100 W CW
Φ
4.5
°
Average Group Delay @ Pout
= 100 W CW, f = 1490 MHz
Delay
1.9
ns
Part-to-Part Insertion Phase Variation @ Pout
= 100 W CW,
f = 1490 MHz, Six Sigma Window
ΔΦ
23
°
Gain Variation over Temperature
(-30°C to +85°C)
ΔG
0.010
dB/°C
Output Power Variation over Temperature
(-30°C to +85°C)
ΔP1dB
0.007
W/°C
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